s mhop microelectronics c orp. a STM4605 50 c/w thermal characteristics product summary v dss i d r ds(on) (m ) max -40v -6a 58 @ vgs=-4.5v 39 @ vgs=-10v features super high dense cell design for low r ds(on) . rugged and reliable. suface mount package. p-channel enhancement mode field effect transistor thermal resistance, junction-to-ambient r ja www.samhop.com.tw jul,27,2010 1 details are subject to change without notice. s o-8 1 a ver 1.0 green product 4 3 2 1 d d d d gs s 5 6 7 8 s symbolv ds v gs i dm a i d units parameter -40 vv 20 gate-source voltage drain-source voltage absolute maximum ratings ( t a =25 c unless otherwise noted ) limit drain current-continuous -pulsed b a t c =25 c w p d c -55 to 150 t c =25 c maximum power dissipation operating junction and storage temperature range t j , t stg t c =70 c a e as mj single pulse avalanche energy d t c =70 c w a a 46 -6 -33.5 2.5 -4.8 1.6
symbol min typ max units bv dss -40 v -1 i gss 100 na v gs(th) -1 v g fs 16.5 s c iss 970 pf c oss 120 pf c rss 100 pf q g 14 nc 16 nc q gs 63 nc q gd 34 t d(on) 20 ns t r 1.9 ns t d(off) 5.2 ns t f ns gate-drain charge v ds =-20v,v gs =0v switching characteristics gate-source charge v dd =-20v i d =-1a v gs =-10v r gen =6 ohm total gate charge rise time turn-off delay time v ds =-20v,i d =-6a,v gs =-10v fall time turn-on delay time m ohm v gs =-10v , i d =-6a v ds =-5v , i d =-6a input capacitance output capacitance dynamic characteristics r ds(on) drain-source on-state resistance forward transconductance i dss ua gate threshold voltage v ds =v gs , i d =-250ua v ds = -32v , v gs =0v v gs = 20v , v ds =0v zero gate voltage drain current gate-body leakage current electrical characteristics ( t a =25 c unless otherwise noted ) off characteristics parameter conditions drain-source breakdown voltage v gs =0v , i d =-250ua reverse transfer capacitance on characteristics v gs =-4.5v , i d =-4.9a 39 58 m ohm f=1.0mhz c v ds =-20v,i d =-6a, v gs =-10v drain-source diode characteristics and maximum ratings ver 1.0 www.samhop.com.tw jul,27,2010 2 nc v ds =-20v,i d =-6a,v gs =-4.5v 10 c 31 43 -1.7 -3 STM4605 v sd diode forward voltage v gs =0v,i s =-2a -0.8 -1.2 v _ _ _ b notes a.surface mounted on fr4 board,t < 10sec. b.pulse test:pulse width < 300us, duty cycle < 2%. c.guaranteed by design, not subject to production testing. d.starting t j =25 c,l=0.5mh,v dd = 20v.(see figure13)
ver 1.0 www.samhop.com.tw jul,27,2010 3 t j ( c ) -i d , drain current(a) -v ds , drain-to-source voltage(v) figure 1. output characteristics -v gs , gate-to-source voltage(v) figure 2. transfer characteristics -i d , drain current(a) r ds(on) (m ) r ds(on) , on-resistance normalized -i d , drain current(a) tj, junction temperature( c ) figure 3. on-resistance vs. drain current and gate voltage figure 4. on-resistance variation with drain current and temperature vth, normalized gate-source threshold voltage bvdss, normalized drain-source breakdown voltage tj, junction temperature( c ) figure 5. gate threshold variation with temperature tj, junction temperature( c ) figure 6. breakdown voltage variation with temperature STM4605 0.4 0.2 1.6 1.4 1.2 1.0 0.8 0.6 125 150 100 75 50 25 0 -25 -50 1.15 1.10 1. 05 1.00 0. 95 0.90 0.85 125 150 100 75 50 25 0 -25 -50 30 24 18 12 6 0 0 0.5 1.0 1.5 2.0 2.5 3.0 v g s = -10 v v g s = -3 v v g s = -3 .5v v g s = -4 v v g s = - 4.5v 15 12 9 6 3 0 0 0.8 4.8 4.0 3.2 2.4 1.6 25 c 125 c -55 c 90 75 60 45 30 15 1 1 6 12 18 24 30 v g s = -10v v g s =-4.5v 2.0 1.8 1.6 1.4 1.2 1.0 0 0 100 75 25 50 125 150 g s =-10v =-6a v i d v g s =-4.5v i d = -4.9a
ver 1.0 www.samhop.com.tw jul,27,2010 4 r ds(on) (m ) -v gs , gate-to-source voltage(v) figure 7. on-resistance vs. gate-source voltage -is, source-drain current(a) -v sd , body diode forward voltage(v) figure 8. body diode forward voltage variation with source current c, capacitance(pf) -v ds , drain-to-source voltage(v) figure 9. capacitance -v gs , gate to source voltage(v) qg, total gate charge(nc) figure 10. gate charge switching time(ns) rg, gate resistance( ) figure 11. switching characteristics -i d , drain current(a) -v ds , drain-source voltage(v) figure 12. maximum safe operating area STM4605 c rs s c s s o c s s i 1500 1250 1000 750 500 250 0 10 15 20 25 30 0 5 90 75 60 45 30 15 0 2 4 6 8 10 0 i d =-6a 25 c 125 c 75 c 20.0 10.0 1.0 0 0.25 0.50 0.75 1.00 1.25 5.0 25 c 75 c 125 c 10 86 4 2 0 0 3 6 9 12 15 18 21 24 v ds = -20v i d =-6a 1 10 100 1 10 100 300 vds=-20v,id=-1a vgs=-10v td(off ) tf td(on) t r 0.1 1 10 40 10 1 0.1 0.03 80 v gs =-10v single pulse t a =25 c r d s ( o n ) l i m it d c 10s 1s 100ms 10 m s 1ms 1 0 0u s
STM4605 www.samhop.com.tw jul,27,2010 5 ver 1.0 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 10 100 1000 normalized transient thermal resistance square wave pulse duration(sec) figure 14. normalized thermal transient impedance curve p dm t 1 t 2 1. r thj a (t)=r (t) * r j a 2. r j a =s ee datas heet 3. t j m- t a = p dm * r j a (t ) 4. duty c ycle, d=t 1 /t 2 th th th single pulse 0.01 0.02 0.05 0.1 0.2 0.5 1 t p v ( br )d ss i a s figure 13b. unclamped inductive waveforms figure 13a. unclamped inductive test circuit r g i a s 0.0 1 t p d .u .t l v d s + - d d 20v v
STM4605 www.samhop.com.tw jul,27,2010 6 package outline dimensions ver 1.0 so-8 symbols min min 0.004 0.189 0 1.350.10 1.25 0.17 4.80 3.70 0 max max 0.069 0.010 0.064 0.010 0.197 0.157 8 1.75 0.25 1.63 0.25 5.00 4.00 8 millimeters inches 1 e d a a1 b e h l h x 45 o a a1 a2 c de e h l h 1.27 ref. 5.80 6.20 0.40 1.27 0.25 0.50 0.050 bsc 0.228 0.244 0.010 a2 c b 0.020 0.31 0.51 0.053 0.049 0.012 0.007 0.146 0.016 0.050 0.020
STM4605 www.samhop.com.tw jul,27,2010 7 ver 1.0 so-8 tape and reel data so-8 carrier tape so-8 reel unit: @ package sop 8n 150 ? a0 b0 k0 d0 d1 e e1 e2 p0 p1 p2 t 6.50 5.25 2.10 ? 1.5 (min) ? 1.55 12.0+0.3 - 0.1 1.75 5.5 2 0.10 8.0 2 0.10 4.0 2 0.10 2.0 2 0.10 0.30 2 0.013 unit: @ tape size 12 @ reel size ? 330 m n w w1 h k s g r v 330 2 1 62 2 1.5 12.4 + 0.2 16.8 - 0.4 ? 12.75 + 0.15 2.0 2 0.15 a a e e1 e2 p0 d0 a0 b0 d1 p1 p2 feeding direction t k0 section a-a 2 0.15 2 0.10 2 0.10 2 0.10 2 0.10 terminal number 1 w1 m n w g v r s k h
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